fes8jt, fesf8jt, fesb8jt series vishay semiconductors formerly general semiconductor document number 88600 www.vishay.com 02-apr-03 1 ultrafast plastic rectifiers reverse voltage 50 to 600v forward current 8.0 a reverse recovery time 35 to 50ns 0.08 (2.032) 0.24 (6.096) 0.42 (10.66) 0.63 (17.02) 0.12 (3.05) 0.33 (8.38) mounting pad layout to-263ab 0.380 (9.65) 0.411 (10.45) 0.320 (8.13) 0.360 (9.14) 0.591 (15.00) 0.624 (15.85) 1 2 0.245 (6.22) min k 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) k 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.140 (3.56) 0.090 (2.29) 0.110 (2.79) 0.047 (1.19) 0.055 (1.40) pin 1 pin 2 k - heatsink 0-0.01 (0-0.254) 0.060 (1.52) 0.405 (10.27) 0.383 (9.72) 0.191 (4.85) 0.171 (4.35) 0.600 (15.5) 0.580 (14.5) 0.560 (14.22) 0.530 (13.46) 0.037 (0.94) 0.027 (0.69) 0.140 (3.56) 0.130 (3.30) 0.350 (8.89) 0.330 (8.38) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.131 (3.39) 0.122 (3.08) 0.110 (2.80) 0.100 (2.54) 0.022 (0.55) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 12 pin dia. dia. pin 1 pin 2 0.676 (17.2) 0.646 (16.4) ito-220ac (fesf8jt) to-220ac (fes8jt) dimensions in inches and (millimeters) to-263ab (fesb8jt) 0.154 (3.91) 0.148 (3.74) dia. 0.113 (2.87) 0.103 (2.62) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 0.160 (4.06) 0.140 (3.56) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 12 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.410 (10.41) 0.390 (9.91) 0.635 (16.13) 0.625 (15.87) 0.603 (15.32) 0.573 (14.55) pin 0.415 (10.54) max. pin 1 pin 2 case 0.370 (9.40) 0.360 (9.14) features plastic package has underwriters laboratory flammability classification 94v-0 ?glass passivated chip junction ?low leakage, high voltage ?high surge current capability ?superfast recovery time, for high efficiency mechanical data case: jedec to-220ac, ito-220ac & to-263ab molded plastic body terminals: plated leads, solderable per mil-std-750, method 2026 high temperature soldering guaranteed: 250?, 0.16 (4.06mm) from case for 10 seconds polarity: as marked mounting position: any mounting torque: 10 in-lbs maximum weight: 0.08 oz., 2.24 g
fes8jt, fesf8jt, fesb8jt series vishay semiconductors formerly general semiconductor www.vishay.com document number 88600 2 02-apr-03 maximum ratings ratings at 25? ambient temperature unless otherwise specified. fes fes fes fes fes fes fes fes parameter symbol 8at 8bt 8ct 8dt 8ft 8gt 8ht 8jt unit maximum repetitive peak reverse voltage v rrm 50 100 150 200 300 400 500 600 v maximum rms voltage v rms 35 70 105 140 210 280 350 420 v maximum dc blocking voltage v dc 50 100 150 200 300 400 500 600 v maximum average forward rectified current at t c =100? i f(av) 8.0 a peak forward surge current 8.3ms single half sine-wave superimposed i fsm 200 125 a on rated load (jedec method) at t c =100? operating storage and temperature range t j , t stg 55 to +150 ? rms isolation voltage (fesf type only) from 4500 (1) terminals to heatsink with t =1.0 second, rh 30% v isol 3500 (2) v 1500 (3) electrical characteristics ratings at 25? ambient temperature unless otherwise specified. fes fes fes fes fes fes fes fes parameter symbol 8at 8bt 8ct 8dt 8ft 8gt 8ht 8jt unit maximum instantaneous forward voltage @ 8.0a (4) v f 0.95 1.30 1.50 v maximum dc reverse current t c =25? 10 at rated dc blocking voltage t c =100? i r 500 a maximum reverse recovery time at i f =0.5a, i r =1.0a, i rr =0.25a t rr 35 50 ns typical junction capacitance at 4v, 1mh z c j 85 50 pf thermal characteristics (t c = 25? unless otherwise noted) parameter symbol fes fesf fesb unit typical thermal resistance from junction to case r jc 2.2 5.0 2.2 ?/w notes: (1) clip mounting (on case), where lead does not overlap heatsink with 0.110 offset (2) clip mounting (on case), where leads do overlap heatsink (3) screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19? (4) pulse test: 300 s pulse width, 1% duty cycle ordering information product case package code package option fes8at thru fes8jt to-220ac 45 anti-static tube, 50/tube, 2k/carton fesf8at thru fesf8jt ito-220ac 45 anti-static tube, 50/tube, 2k/carton 31 13 reel, 800/reel, 4.8k/carton FESB8AT thru fesb8jt to-263ab 45 anti-static tube, 50/tube, 2k/carton 81 anti-static 13 reel, 800/reel, 4.8k/carton
0 50 100 150 0 2.0 4.0 6.0 8.0 10 1 10 100 0 25 50 75 100 125 150 0.1 1 10 100 10 100 1,000 0.2 0.6 1.0 1.4 1.8 0.1 1.0 10 40 0 20 40 60 80 100 0.01 0.1 1 10 100 fig. 2 ?maximum non-repetitive peak forward surge current peak forward surge current (a) number of cycles at 60 h z fig. 1 ?maximum forward current derating curve average forward rectified current (a) temperature ( c) instantaneous forward voltage (v) fig. 3 ?typical instantaneous forward characteristics fig. 4 ?typical reverse leakage characteristics instantaneous reverse leakage current ( a) percent of rated peak reverse voltage (%) t c = 100 c 8.3ms single half sine-wave (jedec method) instantaneous forward current (a) reverse voltage (v) junction capacitance (pf) fig. 5 ?typical junction capacitance resistive or inductive load heatsink, case temperature, t c free air, ambient temperature, t a pulse width = 300 s 1% duty cycle t j = 125 c t j = 25 c 50 - 200v 300 - 400v 500 - 600v 50 - 200v 500 - 600v 50 - 200v 500 - 600v t j = 125 c t j = 25 c t j = 100 c t j = 25 c f = 1.0 mhz vsig = 50mvp-p fes8jt, fesf8jt, fesb8jt series vishay semiconductors formerly general semiconductor document number 88600 www.vishay.com 02-apr-03 3 ratings and characteristic curves (t a = 25 c unless otherwise noted)
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